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SFH6942
Vishay Semiconductors
Optocoupler, Phototransistor Output, SOT-223/10, Quad Channel
Features
* Transistor Optocoupler in SOT-223/10 Package * End Stackable, 1.27 mm Spacing e3 * Low Current Input * Very High CTR, 150 % Typical at IF = 1 mA, VCE = 5 V * Good CTR Linearity Versus Forward Current * Minor CTR Degradation * High Collector-Emitter Voltage, VCEO=70 V * Low Coupling Capacitance * * * * High Common Mode Transient Immunity Isolation Test Voltage: 1768 VRMS Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A1 A2 Com. C3 A4 A5
10 E1 9 E2 8 Com. C 7 E3 6 E4
i179077
Description
The SFH6942 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 1768 VRMS isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT-223/10 package. All the cathodes of the input LEDs and all the collectors of the output transistors are common enabling a pin count reduction from 16 pins to 10 pins-a significant space savings as compared to four channels that are electrically isolated individually.
Agency Approvals
* UL1577, File No. E52744 System Code V * CSA 93751
Applications
* * * * Telecommunication SMT PCMCIA Instrumentation
Order Information
Part SFH6942 SFH6942T Remarks CTR 63 - 500 %, SOT-10 CTR 63 - 500 %, SOT-10, Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC forward current Surge forward current Total power dissipation tP 10 s Test condition Symbol VR IF IFSM Pdiss Value 3 5 100 10 Unit V mA mA mW
Document Number 81290 Rev. 1.0, 20-Apr-06
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SFH6942
Vishay Semiconductors Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current Surge collector current Total power dissipation tP < 1 ms Test condition Symbol VCE VEC IC IFSM Pdiss Value 70 7 10 20 20 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) Creepage Clearance Comparative tracking index per DIN IEC 112/VDE0303, part 1 Isolation resistance VIO = 100 V, Tamb = 25 C VIO = 100 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature, Dip soldering plus reflow soldering processes t = 10 sec. max RIO RIO Tstg Tamb Tj Tsld Test condition t = 1 sec. Symbol VISO Value 1768 Unit VRMS
4 4 175 1011 1012 - 55 to + 150 - 55 to + 100 100 260
mm mm
C C C C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Thermal resistance VR = 3 V VR = 0 V, f = 1 MHz Test condition IF = 5 mA Symbol VF IR CO Rthja Min Typ. 1.25 0.01 5 1000 10 Max Unit V A pF K/W
Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector-emitter capacitance Thermal resistance Collector-emitter leakage current VCE = 4 V Test condition ICE = 10 A IEC = 10 A VCE = 5 V, f = 1 MHz Symbol VCEO VECO CCE Rthja ICEO Min 70 7 6 500 50 Typ. Max Unit V V pF K/W nA
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Document Number 81290 Rev. 1.0, 20-Apr-06
SFH6942
Vishay Semiconductors Coupler
Parameter Coupling capacitance Test condition Symbol CC Min Typ. 1 Max Unit pF
Current Transfer Ratio
Parameter Coupling Transfer Ratio Test condition IF = 1 mA, VCE = 1.5 V IF = 0.5 mA, VCC = 5 V Part SFH6942 SFH6942 Symbol IE/IF IE/IF Min 63 78 100 Typ. Max 200 Unit % %
Switching Characteristics
Parameter Turn-on time Rise time Turn-off time Fall time Test condition IE = 2 mA, RE = 100 , VCC = 5 V IE = 2 mA, RE = 100 , VCC = 5 V IE = 2 mA, RE = 100 , VCC = 5 V IE = 2 mA, RE = 100 , VCC = 5 V Symbol ton tr toff tf Min Typ. 3 2.6 3.1 2.8 Max Unit s s s s
Typical Characteristics
Tamb = 25 C, unless otherwise specified
IF IF
VCC = 5 V
V0 F = 10 KHz DF = 50 % IE = 2 mA
VO
RE = 100
tR
isfh6943_02
tF tON tOFF
isfh6943_01
Figure 1. Switching times (typ.)
Figure 2. Switching Waveform
Document Number 81290 Rev. 1.0, 20-Apr-06
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SFH6942
Vishay Semiconductors
101
103 VF = f (IF) 10
85 50 25 -2 5
2
IF = 0, ICEO = f (VCE)
100 IF / mA
101 ICEO/nA 100 10-1 10-2
10-1
10-2 0.8
isfh6943_03
10-3
0.9 1 VF/V 1.1 1.2 1.3 1.4
isfh6943_06
0
10
20
30 VCE/V
40
50
60
70
Figure 3. LED Current vs. LED Voltage
Figure 6. Collector-Emitter Leakage Current (typ.)
2.0 1.8 1.6 1.4 1.2 NCTR 1.0 0.8 0.6 0.4 0.2 0 10 - 4
isfh6943_04
Normalized to IF = 1 mA, NCTR = f (IF ) VCE = 1.5 V IF = 1 mA
8 7 6 5 4 IF/mA 3 2 1 0
IF = f
IF/A
10
-3
10
-2
isfh6943_07
0
10
20
30
40
50
60
70
80
90 100
TA/C
Figure 4. Non-Saturated Current Transfer
Figure 7. Permissible Forward Current Diode
25.0 22.5 20.0 17.5 15.0 12.5
F
30
f = 1 MHz, CCE = f (VCE )
Ptot = f (TA)
25 20 15
Transistor
CCE /P
Ptot/mW
10.0 7.5 5.0 2.5 0 10-2 10-1
CCE
10 5 0
Diode
100 VCE /V
101
102
isfh6943_08
0
10
20
30
40
50
60
70
80
90
100
isfh6943_05
TA/C
Figure 5. Transistor Capacitances (typ.)
Figure 8. Permissible Power Dissipation
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Document Number 81290 Rev. 1.0, 20-Apr-06
SFH6942
Vishay Semiconductors
103
IF = 1 mA, VCC = 5 V, ton, tr, toff, tt = f (RL) toff tf ton
ICE/mA
25
ICE = 1 (VCE, IF)
20
102
IF = 5 mA IF = 4 mA IF = 3 mA IF = 2 mA IF = 1 mA
15
t/us
101 tr
10
5
100 102
isfh6943_09
0
103 RL/OHM
104
105
isfh6943_10
10-2
10-1 VCE/V
100
101
102
Figure 9.
Figure 10. Transistor Output Characteristics
Package Dimensions in Inches (mm)
10 7
0.016 (0.41)
0.256 0.004 0.043 (6.50 0.10) (1.09) 0.200 0.005 (5.80 0.13)
0.004(0.10) 0.138 0.004 max. (3.51 0.10)
0.01 (0.25) R
0.020 0.004 (0.51 0.10) 10 0-7
0.018 (0.46) 0.063 0.004 (1.60 0.10)
0.035 (0.90)
0.002 + 0.002 - 0.001 (0.05 + 0.05 - 0.03)
0.010R 7 (0.25) 45 0.276 0.008 (7.01 0.20)
0.020 (0.51) min.
R 0.005 (0.13)
0.010 (0.25) 0.053 (1.35)
ISO Method A 0.050 (1.27) 0.040 (1.02)
i178044
0.024 (0.61) 0.026 (0.66) 0.216 (5.49) 0.296 (7.52)
Document Number 81290 Rev. 1.0, 20-Apr-06
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SFH6942
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81290 Rev. 1.0, 20-Apr-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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